# Fabrication of Smart Chemical Sensors Based on Transition-Doped-Semiconductor Nanostructure Materials with µ-Chips

> Transition metal doped semiconductor nanostructure materials (Sb2O3 doped ZnO microflowers, MFs) are deposited onto tiny µ-chip (surface area, ∼0.02217 cm(2)) to fabricate a smart chemical sensor for toxic ethanol in phosphate buffer solution (0.1 M PBS). The fabricated chemi-sensor is also exhibite...

## Metadata
- Authors: Mohammed Muzibur Rahman, Sher Bahadar Khan, Abdullah Mohamed Asiri
- Journal: PLoS ONE
- Published: 2014-01-13
- DOI: https://doi.org/10.1371/journal.pone.0085036
- Citations: 37
- Source: OpenAlex
- Access: Open Access

## Technology Hub
- Hub: Semiconductor Technology
- Discipline: Engineering / Materials Science
- Hub URL: https://science-database.com/technology/semiconductor
- Hub llms.txt: https://science-database.com/technology/semiconductor/llms.txt

## Abstract
Transition metal doped semiconductor nanostructure materials (Sb2O3 doped ZnO microflowers, MFs) are deposited onto tiny µ-chip (surface area, ∼0.02217 cm(2)) to fabricate a smart chemical sensor for toxic ethanol in phosphate buffer solution (0.1 M PBS). The fabricated chemi-sensor is also exhibited higher sensitivity, large-dynamic concentration ranges, long-term stability, and improved electrochemical performances towards ethanol. The calibration plot is linear (r(2) = 0.9989) over the large ethanol concentration ranges (0.17 mM to 0.85 M). The sensitivity and detection limit is ∼5.845 µAcm(-2)mM(-1) and ∼0.11±0.02 mM (signal-to-noise ratio, at a SNR of 3) respectively. Here, doped MFs are prepared by a wet-chemical process using reducing agents in alkaline medium, which characterized by UV/vis., FT-IR, Raman, X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD), and field-emission scanning electron microscopy (FE-SEM) etc. The fabricated ethanol chemical sensor using Sb2O3-ZnO MFs is simple, reliable, low-sample volume (<70.0 µL), easy of integration, high sensitivity, and excellent stability for the fabrication of efficient I-V sensors on μ-chips.

## Links
- DOI: https://doi.org/10.1371/journal.pone.0085036
- OpenAlex: https://openalex.org/W2028530049
- PDF: https://journals.plos.org/plosone/article/file?id=10.1371/journal.pone.0085036&type=printable
- JSON API: https://science-database.com/api/v1/technology/semiconductor

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Paper ID: oa-W2028530049 | Hub: semiconductor