{"technology":{"slug":"semiconductor","name":"Semiconductor Technology","description":"Advanced semiconductor manufacturing and design. Covers chip fabrication below 3nm, EUV lithography, novel materials, chiplet architectures, and neuromorphic computing.","discipline":"Engineering / Materials Science","icon":"💻"},"lastUpdated":"2026-07-21T06:27:57.322Z","articleCount":15,"articles":[{"id":"oa-W2130869501","title":"Transport phenomena in nanofluidics","authors":"Reto B. Schoch, Jongyoon Han, Philippe Renaud","journal":"Reviews of Modern Physics","pubDate":"2008-07-17","doi":"10.1103/revmodphys.80.839","abstract":"The transport of fluid in and around nanometer-sized objects with at least one characteristic dimension below $100\\phantom{\\rule{0.3em}{0ex}}\\mathrm{nm}$ enables the occurrence of phenomena that are impossible at bigger length scales. This research field was only recently termed nanofluidics, but it has deep roots in science and technology. Nanofluidics has experienced considerable growth in recent years, as is confirmed by significant scientific and practical achievements. This review focuses on the physical properties and operational mechanisms of the most common structures, such as nanometer-sized openings and nanowires in solution on a chip. Since the surface-to-volume ratio increases with miniaturization, this ratio is high in nanochannels, resulting in surface-charge-governed transport, which allows ion separation and is described by a comprehensive electrokinetic theory. The charge selectivity is most pronounced if the Debye screening length is comparable to the smallest dimension of the nanochannel cross section, leading to a predominantly counterion containing nanometer-sized aperture. These unique properties contribute to the charge-based partitioning of biomolecules at the microchannel-nanochannel interface. Additionally, at this free-energy barrier, size-based partitioning can be achieved when biomolecules and nanoconstrictions have similar dimensions. Furthermore, nanopores and nanowires are rooted in interesting physical concepts, and since these structures demonstrate sensitive, label-free, and real-time electrical detection of biomolecules, the technologies hold great promise for the life sciences. The purpose of this review is to describe physical mechanisms on the nanometer scale where new phenomena occur, in order to exploit these unique properties and realize integrated sample preparation and analysis systems.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W2130869501","citationCount":1900,"isOpenAccess":true,"pdfUrl":"http://link.aps.org/pdf/10.1103/RevModPhys.80.839"},{"id":"oa-W2001086979","title":"Humidity Sensors Principle, Mechanism, and Fabrication Technologies: A Comprehensive Review","authors":"Hamid Farahani, Rahman Wagiran, Mohd Nizar Hamidon","journal":"Sensors","pubDate":"2014-04-30","doi":"10.3390/s140507881","abstract":"Humidity measurement is one of the most significant issues in various areas of applications such as instrumentation, automated systems, agriculture, climatology and GIS. Numerous sorts of humidity sensors fabricated and developed for industrial and laboratory applications are reviewed and presented in this article. The survey frequently concentrates on the RH sensors based upon their organic and inorganic functional materials, e.g., porous ceramics (semiconductors), polymers, ceramic/polymer and electrolytes, as well as conduction mechanism and fabrication technologies. A significant aim of this review is to provide a distinct categorization pursuant to state of the art humidity sensor types, principles of work, sensing substances, transduction mechanisms, and production technologies. Furthermore, performance characteristics of the different humidity sensors such as electrical and statistical data will be detailed and gives an added value to the report. By comparison of overall prospects of the sensors it was revealed that there are still drawbacks as to efficiency of sensing elements and conduction values. The flexibility offered by thick film and thin film processes either in the preparation of materials or in the choice of shape and size of the sensor structure provides advantages over other technologies. These ceramic sensors show faster response than other types.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W2001086979","citationCount":1264,"isOpenAccess":true,"pdfUrl":"https://www.mdpi.com/1424-8220/14/5/7881/pdf?version=1403353770"},{"id":"oa-W2051597024","title":"Plasmon slot waveguides: Towards chip-scale propagation with subwavelength-scale localization","authors":"Jennifer A. Dionne, Luke A. Sweatlock, Harry A. Atwater, Albert Polman","journal":"Physical Review B","pubDate":"2006-01-05","doi":"10.1103/physrevb.73.035407","abstract":"We present a numerical analysis of surface plasmon waveguides exhibiting both long-range propagation and spatial confinement of light with lateral dimensions of less than 10% of the free-space wavelength. Attention is given to characterizing the dispersion relations, wavelength-dependent propagation, and energy density decay in two-dimensional $\\mathrm{Ag}∕\\mathrm{Si}{\\mathrm{O}}_{2}∕\\mathrm{Ag}$ structures with waveguide thicknesses ranging from $12\\phantom{\\rule{0.3em}{0ex}}\\mathrm{nm}\\phantom{\\rule{0.3em}{0ex}}\\text{to}\\phantom{\\rule{0.3em}{0ex}}250\\phantom{\\rule{0.3em}{0ex}}\\mathrm{nm}$. As in conventional planar insulator-metal-insulator (IMI) surface plasmon waveguides, analytic dispersion results indicate a splitting of plasmon modes---corresponding to symmetric and antisymmetric electric field distributions---as $\\mathrm{Si}{\\mathrm{O}}_{2}$ core thickness is decreased below $100\\phantom{\\rule{0.3em}{0ex}}\\mathrm{nm}$. However, unlike IMI structures, surface plasmon momentum of the symmetric mode does not always exceed photon momentum, with thicker films $(d\\ensuremath{\\sim}50\\phantom{\\rule{0.3em}{0ex}}\\mathrm{nm})$ achieving effective indices as low as $n=0.15$. In addition, antisymmetric mode dispersion exhibits a cutoff for films thinner than $d=20\\phantom{\\rule{0.3em}{0ex}}\\mathrm{nm}$, terminating at least $0.25\\phantom{\\rule{0.3em}{0ex}}\\mathrm{eV}$ below resonance. From visible to near infrared wavelengths, plasmon propagation exceeds tens of microns with fields confined to within $20\\phantom{\\rule{0.3em}{0ex}}\\mathrm{nm}$ of the structure. As the $\\mathrm{Si}{\\mathrm{O}}_{2}$ core thickness is increased, propagation distances also increase with localization remaining constant. Conventional waveguiding modes of the structure are not observed until the core thickness approaches $100\\phantom{\\rule{0.3em}{0ex}}\\mathrm{nm}$. At such thicknesses, both transverse magnetic and transverse electric modes can be observed. Interestingly, for nonpropagating modes (i.e., modes where propagation does not exceed the micron scale), considerable field enhancement in the waveguide core is observed, rivaling the intensities reported in resonantly excited metallic nanoparticle waveguides.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W2051597024","citationCount":1142,"isOpenAccess":true,"pdfUrl":"http://link.aps.org/pdf/10.1103/PhysRevB.73.035407"},{"id":"oa-W1973381743","title":"Gas-assisted focused electron beam and ion beam processing and fabrication","authors":"Ivo Utke, P. Hoffmann, J. Melngailis","journal":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","pubDate":"2008-07-01","doi":"10.1116/1.2955728","abstract":"Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a surface, they represent direct nanofabrication tools. The authors will focus here on direct fabrication rather than lithography, which is indirect in that it uses the intermediary of resist. In the case of both ions and electrons, material addition or removal can be achieved using precursor gases. In addition ions can also alter material by sputtering (milling), by damage, or by implantation. Many material removal and deposition processes employing precursor gases have been developed for numerous practical applications, such as mask repair, circuit restructuring and repair, and sample sectioning. The authors will also discuss structures that are made for research purposes or for demonstration of the processing capabilities. In many cases the minimum dimensions at which these processes can be realized are considerably larger than the beam diameters. The atomic level mechanisms responsible for the precursor gas activation have not been studied in detail in many cases. The authors will review the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W1973381743","citationCount":1021,"isOpenAccess":true,"pdfUrl":"https://avs.scitation.org/doi/pdf/10.1116/1.2955728"},{"id":"oa-W2498063088","title":"Organic Lasers: Recent Developments on Materials, Device Geometries, and Fabrication Techniques","authors":"Alexander J. C. Kuehne, Malte C. Gather","journal":"Chemical Reviews","pubDate":"2016-08-08","doi":"10.1021/acs.chemrev.6b00172","abstract":"Organic dyes have been used as gain medium for lasers since the 1960s, long before the advent of today's organic electronic devices. Organic gain materials are highly attractive for lasing due to their chemical tunability and large stimulated emission cross section. While the traditional dye laser has been largely replaced by solid-state lasers, a number of new and miniaturized organic lasers have emerged that hold great potential for lab-on-chip applications, biointegration, low-cost sensing and related areas, which benefit from the unique properties of organic gain materials. On the fundamental level, these include high exciton binding energy, low refractive index (compared to inorganic semiconductors), and ease of spectral and chemical tuning. On a technological level, mechanical flexibility and compatibility with simple processing techniques such as printing, roll-to-roll, self-assembly, and soft-lithography are most relevant. Here, the authors provide a comprehensive review of the developments in the field over the past decade, discussing recent advances in organic gain materials, which are today often based on solid-state organic semiconductors, as well as optical feedback structures, and device fabrication. Recent efforts toward continuous wave operation and electrical pumping of solid-state organic lasers are reviewed, and new device concepts and emerging applications are summarized.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W2498063088","citationCount":783,"isOpenAccess":true,"pdfUrl":"https://research-repository.st-andrews.ac.uk/bitstream/10023/11411/1/Kuehne_2016_Organic_ChemRev_AAM.pdf"},{"id":"oa-W1969448305","title":"Synthesis, assembly and applications of semiconductor nanomembranes","authors":"John A. Rogers, M. G. Lagally, Ralph G. Nuzzo","journal":"Nature","pubDate":"2011-08-30","doi":"10.1038/nature10381","abstract":"","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W1969448305","citationCount":704,"isOpenAccess":true,"pdfUrl":"https://www.osti.gov/servlets/purl/1876405"},{"id":"oa-W2519556550","title":"Large-scale quantum-emitter arrays in atomically thin semiconductors","authors":"Carmen Palacios-Berraquero, Dhiren M. Kara, Alejandro R.‐P. Montblanch, Matteo Barbone, Pawel Latawiec, Duhee Yoon, Anna K. Ott, Marko Lončar, Andrea C. Ferrari, Mete Atatüre","journal":"Nature Communications","pubDate":"2017-05-22","doi":"10.1038/ncomms15093","abstract":"Quantum light emitters have been observed in atomically thin layers of transition metal dichalcogenides. However, they are found at random locations within the host material and usually in low densities, hindering experiments aiming to investigate this new class of emitters. Here, we create deterministic arrays of hundreds of quantum emitters in tungsten diselenide and tungsten disulphide monolayers, emitting across a range of wavelengths in the visible spectrum (610-680 nm and 740-820 nm), with a greater spectral stability than their randomly occurring counterparts. This is achieved by depositing monolayers onto silica substrates nanopatterned with arrays of 150-nm-diameter pillars ranging from 60 to 190 nm in height. The nanopillars create localized deformations in the material resulting in the quantum confinement of excitons. Our method may enable the placement of emitters in photonic structures such as optical waveguides in a scalable way, where precise and accurate positioning is paramount.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W2519556550","citationCount":614,"isOpenAccess":true,"pdfUrl":"https://www.nature.com/articles/ncomms15093.pdf"},{"id":"oa-W2007104515","title":"Silicon Device Scaling to the Sub-10-nm Regime","authors":"M. Ieong, B. Doris, J. Kedzierski, K. Rim, Min Yang","journal":"Science","pubDate":"2004-12-16","doi":"10.1126/science.1100731","abstract":"In the next decade, advances in complementary metal-oxide semiconductor fabrication will lead to devices with gate lengths (the region in the device that switches the current flow on and off) below 10 nanometers (nm), as compared with current gate lengths in chips that are now about 50 nm. However, conventional scaling will no longer be sufficient to continue device performance by creating smaller transistors. Alternatives that are being pursued include new device geometries such as ultrathin channel structures to control capacitive losses and multiple gates to better control leakage pathways. Improvement in device speed by enhancing the mobility of charge carriers may be obtained with strain engineering and the use of different crystal orientations. Here, we discuss challenges and possible solutions for continued silicon device performance trends down to the sub-10-nm gate regimes.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W2007104515","citationCount":573,"isOpenAccess":false,"pdfUrl":""},{"id":"oa-W2336371078","title":"On-chip light sources for silicon photonics","authors":"Zhiping Zhou, Bing Yin, Jürgen Michel","journal":"Light Science & Applications","pubDate":"2015-11-20","doi":"10.1038/lsa.2015.131","abstract":"Serving as the electrical to optical converter, the on-chip silicon light source is an indispensable component of silicon photonic technologies and has long been pursued. Here, we briefly review the history and recent progress of a few promising contenders for on-chip light sources in terms of operating wavelength, pump condition, power consumption, and fabrication process. Additionally, the performance of each contender is also assessed with respect to thermal stability, which is a crucial parameter to consider in complex optoelectronic integrated circuits (OEICs) and optical interconnections. Currently, III-V-based silicon (Si) lasers formed via bonding techniques demonstrate the best performance and display the best opportunity for commercial usage in the near future. However, in the long term, direct hetero-epitaxial growth of III–V materials on Si seems more promising for low-cost, high-yield fabrication. The demonstration of high-performance quantum dot (QD) lasers monolithically grown on Si strongly forecasts its feasibility and enormous potential for on-chip lasers. The superior temperature-insensitive characteristics of the QD laser promote this design in large-scale high-density OEICs. The Germanium (Ge)-on-Si laser is also competitive for large-scale monolithic integration in the future. Compared with a III-V-based Si laser, the biggest potential advantage of a Ge-on-Si laser lies in its material and processing compatibility with Si technology. Additionally, the versatility of Ge facilitates photon emission, modulation, and detection simultaneously with a simple process complexity and low cost. Hybrid silicon lasers based on bonded III–V layers on silicon are currently the best contenders for on-chip lasers for silicon photonics. On-chip silicon light sources are highly desired for use as electrical-to-optical converters in silicon-based photonics. Zhiping Zhou and Bing Yin of Peking University in China and Jurgen Michel of Massachusetts Institute of Technology assess the three main contenders for such light sources: erbium-based light sources, germanium-on-silicon lasers and III-V-based silicon lasers. They consider operating wavelength, pumping conditions, power consumption, thermal stability and fabrication process. The scientists regard the power efficiencies of electrically pumped erbium-based lasers as being too low and the threshold currents of germanium lasers as being too high. They conclude that III–V quantum dot lasers monolithically grown on silicon show the most promise for realizing on-chip lasers.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W2336371078","citationCount":568,"isOpenAccess":true,"pdfUrl":"https://www.nature.com/articles/lsa2015131.pdf"},{"id":"oa-W1975385110","title":"Fabrication, Assembly, and Application of Patchy Particles","authors":"Amar B. Pawar, Ilona Kretzschmar","journal":"Macromolecular Rapid Communications","pubDate":"2010-01-05","doi":"10.1002/marc.200900614","abstract":"The site-specific engineering of colloidal surfaces has provided a powerful approach to pushing the boundaries of today's materials research. The resulting surface-anisotropic and patchy particles have become the center of vital research areas, ranging from the need for large-scale fabrication techniques to exploring new applications of these materials. This Review summarizes patchy particle fabrication techniques, including but not limited to particle and nanosphere lithography and glancing-angle deposition. The variety of existing patchy particle fabrication techniques is revealed and the need for a scalable approach to high-volume patchy particle production is identified. Ongoing modeling efforts describing patchy particle interactions and properties are reviewed as potential predictive tools. Research endeavors that deal with the directed assembly of patchy particles in electric and magnetic fields, as well as with supraparticular assembly through chemical interactions, are discussed. The Review is concluded with a note on the future application of patchy particles as phoretic motors.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W1975385110","citationCount":563,"isOpenAccess":true,"pdfUrl":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/marc.200900614"},{"id":"oa-W2007138906","title":"Nanopore Fabrication by Controlled Dielectric Breakdown","authors":"Harold Kwok, Kyle Briggs, Vincent Tabard‐Cossa","journal":"PLoS ONE","pubDate":"2014-03-21","doi":"10.1371/journal.pone.0092880","abstract":"Nanofabrication techniques for achieving dimensional control at the nanometer scale are generally equipment-intensive and time-consuming. The use of energetic beams of electrons or ions has placed the fabrication of nanopores in thin solid-state membranes within reach of some academic laboratories, yet these tools are not accessible to many researchers and are poorly suited for mass-production. Here we describe a fast and simple approach for fabricating a single nanopore down to 2-nm in size with sub-nm precision, directly in solution, by controlling dielectric breakdown at the nanoscale. The method relies on applying a voltage across an insulating membrane to generate a high electric field, while monitoring the induced leakage current. We show that nanopores fabricated by this method produce clear electrical signals from translocating DNA molecules. Considering the tremendous reduction in complexity and cost, we envision this fabrication strategy would not only benefit researchers from the physical and life sciences interested in gaining reliable access to solid-state nanopores, but may provide a path towards manufacturing of nanopore-based biotechnologies.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W2007138906","citationCount":465,"isOpenAccess":true,"pdfUrl":"https://journals.plos.org/plosone/article/file?id=10.1371/journal.pone.0092880&type=printable"},{"id":"oa-W2560834721","title":"A microprocessor based on a two-dimensional semiconductor","authors":"Stefan Wachter, Dmitry K. Polyushkin, Ole Bethge, Thomas Mueller","journal":"Nature Communications","pubDate":"2017-04-11","doi":"10.1038/ncomms14948","abstract":"The advent of microcomputers in the 1970s has dramatically changed our society. Since then, microprocessors have been made almost exclusively from silicon, but the ever-increasing demand for higher integration density and speed, lower power consumption and better integrability with everyday goods has prompted the search for alternatives. Germanium and III-V compound semiconductors are being considered promising candidates for future high-performance processor generations and chips based on thin-film plastic technology or carbon nanotubes could allow for embedding electronic intelligence into arbitrary objects for the Internet-of-Things. Here, we present a 1-bit implementation of a microprocessor using a two-dimensional semiconductor-molybdenum disulfide. The device can execute user-defined programs stored in an external memory, perform logical operations and communicate with its periphery. Our 1-bit design is readily scalable to multi-bit data. The device consists of 115 transistors and constitutes the most complex circuitry so far made from a two-dimensional material.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W2560834721","citationCount":415,"isOpenAccess":true,"pdfUrl":"https://www.nature.com/articles/ncomms14948.pdf"},{"id":"oa-W3024122711","title":"Semiconductor qubits in practice","authors":"Anasua Chatterjee, Paul Stevenson, Silvano De Franceschi, Andrea Morello, Nathalie P. de Leon, Ferdinand Kuemmeth","journal":"Nature Reviews Physics","pubDate":"2021-02-19","doi":"10.1038/s42254-021-00283-9","abstract":"","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W3024122711","citationCount":346,"isOpenAccess":true,"pdfUrl":"https://arxiv.org/pdf/2005.06564"},{"id":"oa-W2757913998","title":"Nanoimprint lithography steppers for volume fabrication of leading-edge semiconductor integrated circuits","authors":"S. V. Sreenivasan","journal":"Microsystems & Nanoengineering","pubDate":"2017-09-25","doi":"10.1038/micronano.2017.75","abstract":"This article discusses the transition of a form of nanoimprint lithography technology, known as Jet and Flash Imprint Lithography (J-FIL), from research to a commercial fabrication infrastructure for leading-edge semiconductor integrated circuits (ICs). Leading-edge semiconductor lithography has some of the most aggressive technology requirements, and has been a key driver in the 50-year history of semiconductor scaling. Introducing a new, disruptive capability into this arena is therefore a case study in a \"high-risk-high-reward\" opportunity. This article first discusses relevant literature in nanopatterning including advanced lithography options that have been explored by the IC fabrication industry, novel research ideas being explored, and literature in nanoimprint lithography. The article then focuses on the J-FIL process, and the interdisciplinary nature of risk, involving nanoscale precision systems, mechanics, materials, material delivery systems, contamination control, and process engineering. Next, the article discusses the strategic decisions that were made in the early phases of the project including: (i) choosing a step and repeat process approach; (ii) identifying the first target IC market for J-FIL; (iii) defining the product scope and the appropriate collaborations to share the risk-reward landscape; and (iv) properly leveraging existing infrastructure, including minimizing disruption to the widely accepted practices in photolithography. Finally, the paper discusses the commercial J-FIL stepper system and associated infrastructure, and the resulting advances in the key lithographic process metrics such as critical dimension control, overlay, throughput, process defects, and electrical yield over the past 5 years. This article concludes with the current state of the art in J-FIL technology for IC fabrication, including description of the high volume manufacturing stepper tools created for advanced memory manufacturing.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W2757913998","citationCount":223,"isOpenAccess":true,"pdfUrl":"https://www.nature.com/articles/micronano201775.pdf"},{"id":"oa-W3166690669","title":"Sub-10 nm fabrication: methods and applications","authors":"Yiqin Chen, Zhiwen Shu, Shi Zhang, Pei Zeng, Huikang Liang, Mengjie Zheng, Huigao Duan","journal":"International Journal of Extreme Manufacturing","pubDate":"2021-06-04","doi":"10.1088/2631-7990/ac087c","abstract":"Abstract Reliable fabrication of micro/nanostructures with sub-10 nm features is of great significance for advancing nanoscience and nanotechnology. While the capability of current complementary metal-oxide semiconductor (CMOS) chip manufacturing can produce structures on the sub-10 nm scale, many emerging applications, such as nano-optics, biosensing, and quantum devices, also require ultrasmall features down to single digital nanometers. In these emerging applications, CMOS-based manufacturing methods are currently not feasible or appropriate due to the considerations of usage cost, material compatibility, and exotic features. Therefore, several specific methods have been developed in the past decades for different applications. In this review, we attempt to give a systematic summary on sub-10 nm fabrication methods and their related applications. In the first and second parts, we give a brief introduction of the background of this research topic and explain why sub-10 nm fabrication is interesting from both scientific and technological perspectives. In the third part, we comprehensively summarize the fabrication methods and classify them into three main approaches, including lithographic, mechanics-enabled, and post-trimming processes. The fourth part discusses the applications of these processes in quantum devices, nano-optics, and high-performance sensing. Finally, a perspective is given to discuss the challenges and opportunities associated with this research topic.","tldr":"","source":"OpenAlex","sourceUrl":"https://openalex.org/W3166690669","citationCount":208,"isOpenAccess":true,"pdfUrl":"https://doi.org/10.1088/2631-7990/ac087c"}],"links":{"web":"https://science-database.com/technology/semiconductor","llms_txt":"https://science-database.com/technology/semiconductor/llms.txt","api":"https://science-database.com/api/v1/technology/semiconductor"}}